High Speed Semiconductor Devices
Electronics and Communications Engineering
Institute of Natural and Applied Sciences
Third Cycle (Doctorate Degree)
| Course Unit Title | Course Unit Code | Type of Course Unit | Level of Course Unit | Year of Study | Semester | ECTS Credits |
|---|---|---|---|---|---|---|
| High Speed Semiconductor Devices | MEH652 | Elective | Doctorate degree | 1 | Spring | 10 |
Name of Lecturer(s)
Prof. Dr. Ali TANGEL
Learning Outcomes of the Course Unit
1) Ability to model high frequency behavior of transistors (BJT, FET, MOSFET and MESFET)
2) To learn the necessity of heterojunction transistors and their structures
3) Ability to take RF and Microwave measurements on semiconductor wafers
4) To learn and to model electronic behavior of different kinds of heterojunction transistor structures
Program Competencies-Learning Outcomes Relation
| Program Competencies | ||||||||
| 1 | 2 | 3 | 4 | 5 | 6 | 7 | ||
| Learning Outcomes | ||||||||
| 1 | Low | Low | High | Middle | Low | Middle | Middle | |
| 2 | Low | Low | High | Middle | Low | Low | Middle | |
| 3 | Low | Low | High | Middle | No relation | No relation | Middle | |
| 4 | Low | Low | High | Middle | Low | Low | Middle | |
Mode of Delivery
Face to Face
Prerequisites and Co-Requisites
None
Recommended Optional Programme Components
Electronics-1 Electronis-2 VLSI Design Semiconductor Fabrication Technology
Course Contents
Basic concepts in solid state physics; basics of heterojunction and heterojunction devices; HBTs; Quantum Theory of Heterostructures and Quantum Heterostructure Devices (Quantum well, RTD, superlattice); High frequency response of quantum devices (RTD, Infrared laser); Charge Control of the two-dimentional electron gas in HEMT; High electric field transport in semiconductor devices; Current-Voltage models of the short channel MOSFET, SOI, HEMT, and LDMOS; Microwave modelling and electrothermal effects; Noise modelling; On wafer microwave measurement; High frequency heterojunction bipolar transistors; Non-linear RF measurement and RF modelling. Special semiconductor devices and their operation (Flash ROM, SiGe transistors etc.)
Recommended or Required Reading
Planned Learning Activities and Teaching Methods
Assessment Methods and Criteria
Contribution of Semester Studies to Course Grade |
50% |
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Contribution of Final Examination to Course Grade |
50% |
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Total | 100% | ||||||||||||||
Language of Instruction
Turkish
Work Placement(s)
Not Required